| 2005-07 | Lens aberration effect on the line width for different pattern shapes and duty ratios | 오혜근 |
| 2000-12 | Line Width Variation due to Global Topography | 오혜근 |
| 2005-03 | Line width variation with absorber thickness in extreme ultraviolet lithography | 오혜근 |
| 2005-08 | Line-width variation with absorber thickness in extreme ultraviolet lithography | 오혜근 |
| 2003-02 | Lithography Process Optimization Simulator for an Illumination System | 오혜근 |
| 2005-10 | Mask Error Enhancement Factor Variation with Pattern Density | 오혜근 |
| 2006-02 | Mask error enhancement factor variation with pattern density for 65 nm and 90 nm line widths | 오혜근 |
| 2008-11 | A mask generation approach to double patterning technology with inverse lithography | 오혜근 |
| 2006-06 | Mask haze measurement by spectroscopic ellipsometry | 오혜근 |
| 2016-05 | Mask three-dimensional effects of etched multilayer mask for 16-nm half-pitch in extreme ultraviolet lithography | 오혜근 |
| 2016-09 | Mechanical stress induced by external forces in the extreme ultraviolet pellicle | 오혜근 |
| 2006-08 | Modeling for Resist Reflow of an Elongated Contact Hole | 오혜근 |
| 2018-05 | modeling of thermomechanical changes of euv mask and their dependence on absorber variation | 오혜근 |
| 2002-04 | Modification of the Development Parameter for a Chemically Amplified Resist SimulatorModification of the Development Parameter for a Chemically Amplified Resist SimulatorModification of the Development Parameter for a Chemically Amplified Resist SimulatorModification of the Development Parameter for a Chemically Amplified Resist SimulatorModification of the Development Parameter for a Chemically Amplified Resist SimulatorModification of the development parameter for a chemically amplified resist simulator | 오혜근 |
| 2003-12 | Muller matrix ellipsometry 제작 및 응용 | 오혜근 |
| 2015-10 | Multistack structure for an extreme-ultraviolet pellicle with out-of-band radiation reduction | 오혜근 |
| 2016-03 | Non-isotropic shadow effect with various pattern direction in anamorphic high numerical aperture system | 오혜근 |
| 2005-07 | Numerical investigation of defect printability in extreme ultraviolet (EUV) reflector: Ru/Mo/Si multilayer system | 오혜근 |
| 2006-02 | Numerical modeling of absorber characteristics for EUVL | 오혜근 |
| 2006-01 | Optical lithography simulator for the whole resist process | 오혜근 |
| 2003-03 | Optical Properties of the SiO-Co Composite Thin Films | 오혜근 |
| 2021-06 | Optimal phase shift mask and multilayer stack with the evaluation of imaging performance and process latitude in extreme ultraviolet high numerical aperture | 오혜근 |
| 2006-02 | Optimization of chromeless phase mask by comparing scattering bars with zebra patterns | 오혜근 |
| 2008-09 | Optimum Biasing for 45 nm Node Chromeless and Attenuated Phase Shift Mask | 오혜근 |
| 2008-02 | Optimum biasing for 45 nm node chromeless and attenuated phase shift mask | 오혜근 |
| 2008-02 | Optimum dose variation caused by post exposure bake temperature difference inside photoresist over different sublayers and thickness | 오혜근 |
| 2001-12 | Parameter extraction for 193 nm chemically amplified resist from refractive index change | 오혜근 |
| 2018-10 | Pattern Degradation with Larger Particles on EUV Pellicle | 오혜근 |
| 2015-04 | Patterning dependence on the mask defect for extreme ultraviolet lithography | 오혜근 |
| 2008-11 | Patterning of 32 nm 1:1 Line and Space by Resist Reflow Process | 오혜근 |
