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Numerical modeling of absorber characteristics for EUVL

Title
Numerical modeling of absorber characteristics for EUVL
Author
오혜근
Keywords
Absorber characteristics; Aerial image intensity; EUVL; Pattern printability; Reflectivity
Issue Date
2006-02
Publisher
SPIE
Citation
Proceedings of SPIE - The International Society for Optical Engineering; SPIE 31st International Symposium on Advanced Lithography, v. 6151, Article no. 615121
Abstract
The characteristics of various potential absorbers, such as Cr, Ta, and TaN materials were quantitatively investigated by calculating the optical contrast and geometrical width variation of pattern image of 25-nm-width transferred through the exposure system. The intrinsic absorber performance was evaluated by the numerical modeling of the reflectivity on the mask and the aerial image intensity on the wafer. The reflectivity on the mask was calculated for various absorber thicknesses (40-70 nm) using Fresnel equation. For the calculation of the aerial image intensity of pattern features with various absorbers, SOLID-EUV, which is capable of rigorous electromagnetic field computation, was employed. It could be reasonably concluded that the TaN absorber model showed superior optical characteristics compared to other absorber systems, whereas the best performance on the geometrical characteristics was found in the Ta absorber system.
URI
https://www.spiedigitallibrary.org/conference-proceedings-of-spie/6151/615121/Numerical-modeling-of-absorber-characteristics-for-EUVL/10.1117/12.655852.fullhttp://repository.hanyang.ac.kr/handle/20.500.11754/107669
ISSN
0277-786X
DOI
10.1117/12.655852
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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