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Mask Error Enhancement Factor Variation with Pattern Density

Title
Mask Error Enhancement Factor Variation with Pattern Density
Author
오혜근
Keywords
Diffusion length; MEEF; Pattern density; Simulation
Issue Date
2005-10
Publisher
SPIE
Citation
Proceedings of SPIE - The International Society for Optical Engineering, 25th Annual BACUS Symposium on Photomask Technology, v. 5992, No. 2, Article no. 599233
Abstract
The mask error enhancement factor (MEEF) minimization is much emphasized due to the reduction of the device technology node. The MEEF is defined as how mask critical dimension (CD) errors are translated into wafer CD errors. We found that the pattern density had influenced the MEEF and the MEEF changed with the pattern density variation. We also tried to obtain the 90 nm CD value with optimized diffusion length of the chemically amplified resist. It turned out that a very small diffusion length should be used to get the desired 90 nm line width with 193 nm. We used line and space (L/S) dense bars, 3 L/S bars only and isolated line pattern for the pattern density dependency and to obtain different MEEFs. In order to determine the MEEF by the various pattern densities, a commercial simulation tool, Solid-E, was used. We could obtain the minimum MEEF values for the different pattern densities by using this procedure.
URI
https://www.spiedigitallibrary.org/conference-proceedings-of-spie/5992/599233/Mask-error-enhancement-factor-variation-with-pattern-density/10.1117/12.632408.full?SSO=1http://repository.hanyang.ac.kr/handle/20.500.11754/111690
ISSN
0277-786X
DOI
10.1117/12.632408
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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