Optimal phase shift mask and multilayer stack with the evaluation of imaging performance and process latitude in extreme ultraviolet high numerical aperture
- Title
- Optimal phase shift mask and multilayer stack with the evaluation of imaging performance and process latitude in extreme ultraviolet high numerical aperture
- Author
- 오혜근
- Issue Date
- 2021-06
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v. 60, Article no. SCC04, page. 8pp
- Abstract
- In high numerical aperture (NA) extreme ultraviolet lithography, which is used to implement a finer linewidth of 10 nm or lower, serious problems arise in patterning as the NA increases. To alleviate such problems, a thin absorber and a multilayer with good reflective efficiency and improved pattern quality are required. To develop an effective EUV photomask for the commercialization of high-NA systems, we determined the optimal ruthenium (Ru)/silicon (Si) multilayer structure using a phase-shift mask (PSM) absorber. A Ru/Si multilayer (d(Ru) = 2.2 nm, d(Si) = 4.7 nm) using PSM as an absorber has a smaller best-focus range and placement error compared to the molybdenum (Mo)/silicon (Si) multilayer. At the same time, it provides improved image contrast, enabling more stable patterning. Even when the number of layers of the Ru/Si multilayer was reduced, it was confirmed that the reflectance efficiency and image quality were maintained. (c) 2021 The Japan Society of Applied Physics
- URI
- https://iopscience.iop.org/article/10.35848/1347-4065/abf2d1https://repository.hanyang.ac.kr/handle/20.500.11754/166526
- ISSN
- 0021-4922; 1347-4065
- DOI
- 10.35848/1347-4065/abf2d1
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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