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Non-isotropic shadow effect with various pattern direction in anamorphic high numerical aperture system

Title
Non-isotropic shadow effect with various pattern direction in anamorphic high numerical aperture system
Author
오혜근
Keywords
Applied Physics Department, Hanyang University; Fastlitho; Boston University
Issue Date
2016-03
Publisher
SPIE
Citation
Proceedings V. 9776, Extreme Ultraviolet (EUV) Lithography VII; 97762P (2016), Page. 1-9
Abstract
Even though EUV lithography has extremely short wavelength source, a high numerical aperture(NA) system larger than 0.5 is required to make fine pattern of 1X nm and below. In order to avoid reflective efficiency loss and increase of chief ray angle of incident light, anamorphic high NA is suggested. Suggested anamorphic NA system has non-isotropic magnification which is varied 4X to 8X and the mask NA shape is ellipse due to non-isotropic magnification distribution. Anamorphic NA system has a non-conventional shadow effect due to non-isotropic incident angle distribution and magnification. These non-isotropic characteristics leads the reduction of asymmetric shadow distribution and it involves the reduction of horizontal-vertical bias. As a result anamorphic NA system can achieve balanced patterning results regardless of pattern direction and incident direction.
URI
https://www.spiedigitallibrary.org/conference-proceedings-of-spie/9776/1/Non-isotropic-shadow-effect-with-various-pattern-direction-in-anamorphic/10.1117/12.2219874.full?SSO=1http://hdl.handle.net/20.500.11754/65529
ISBN
9781510600119
ISSN
1996-756X; 0277-786X
DOI
10.1117/12.2219874
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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