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Mask three-dimensional effects of etched multilayer mask for 16-nm half-pitch in extreme ultraviolet lithography

Title
Mask three-dimensional effects of etched multilayer mask for 16-nm half-pitch in extreme ultraviolet lithography
Author
오혜근
Keywords
extreme ultraviolet mask structure; etched multilayer mask; extreme ultraviolet lithography; SIMULATION
Issue Date
2016-05
Publisher
SPIE-SOC PHOTO-OPTICAL INSTRUMENTATION ENGINEERS
Citation
JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, v. 15, No. 2, Article no. 023503
Abstract
The absorber stack on the conventional mask in extreme ultraviolet (EUV) lithography technology leads to mask three-dimensional (3-D) effects including horizontal-vertical (H-V) bias and position shifts through focus. To overcome these problems, we revisit the etched multilayer mask structure. We focus on the etched multilayer mask structure process down to a 16-nm half-pitch at a 0.33 numerical aperture, and we compare the results from this mask to those obtained with a conventional mask. Removing the absorber stack makes the H-V bias of an etched multilayer mask smaller than that of a conventional absorber mask for a 16-nm half-pitch. Thus, the etched multilayer mask can be used to reduce the mask 3-D effects. (C) 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)
URI
https://www.spiedigitallibrary.org/journals/Journal-of-MicroNanolithography-MEMS-and-MOEMS/volume-15/issue-2/023503/Mask-three-dimensional-effects-of-etched-multilayer-mask-for-16/10.1117/1.JMM.15.2.023503.full?SSO=1http://hdl.handle.net/20.500.11754/54035
ISSN
1932-5150; 1932-5134
DOI
10.1117/1.JMM.15.2.023503
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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