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Line width variation with absorber thickness in extreme ultraviolet lithography

Title
Line width variation with absorber thickness in extreme ultraviolet lithography
Author
오혜근
Keywords
Aerial image; EUV lithography; Mask absorber; Mask thickness; Near field
Issue Date
2005-03
Publisher
SPIE
Citation
Proceedings of SPIE, Emerging Lithographic Technologies IX, v. 5751, Page. 670-677
Abstract
Selectivity of extreme ultra-violet lithography mask's material and thickness significantly influences on pattern formation. Since the reflectance changes periodically depending on absorber thickness, we investigated the absorber thickness effect on to near field and aerial image for 32 nm line/space and isolated pattern. We chose germanium and chromium as absorber materials. We also investigated the line width variation by absorber thickness change with different duty ratios. SOLID-EUV of sigma-C was used for this study.
URI
https://www.spiedigitallibrary.org/conference-proceedings-of-spie/5751/0000/Line-width-variation-with-absorber-thickness-in-extreme-ultraviolet-lithography/10.1117/12.600406.fullhttp://repository.hanyang.ac.kr/handle/20.500.11754/110300
ISSN
1605-7422
DOI
10.1117/12.600406
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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