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Numerical investigation of defect printability in extreme ultraviolet (EUV) reflector: Ru/Mo/Si multilayer system

Title
Numerical investigation of defect printability in extreme ultraviolet (EUV) reflector: Ru/Mo/Si multilayer system
Author
오혜근
Keywords
EUVL; Ru/Mo/Si reflector; phase defect; defect printability; aerial image characteristics
Issue Date
2005-07
Publisher
INST PURE APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v. 44, No. 7B, Page. 5724-5726
Abstract
The defect printability of Mo/Si and Ru/Mo/Si multilayer (ML) systems for extreme ultraviolet (EUV) reflectors was quantitatively investigated by monitoring aerial images on a wafer. The aerial image intensity of the Ru/Mo/Si model was calculated and compared with that of the Mo/Si model for various defect widths, heights, and positions. The aerial image characteristic of the defective ML structure turned out to be mainly dependent on defect height, which is related to the phase shift of the reflected field. Peak intensity and peak position shift according to the lateral position were calculated on an ML mask with a 50nm L/S pattern. Through the investigation of the aerial image characteristics of the two models, it can be concluded that the Ru/Mo/Si model seems to be consistent with the Mo/Si model for all cases within similar to 6%.
URI
https://iopscience.iop.org/article/10.1143/JJAP.44.5724/metahttp://repository.hanyang.ac.kr/handle/20.500.11754/111139
ISSN
0021-4922
DOI
10.1143/JJAP.44.5724
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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