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modeling of thermomechanical changes of euv mask and their dependence on absorber variation

Title
modeling of thermomechanical changes of euv mask and their dependence on absorber variation
Author
오혜근
Keywords
EUV LITHOGRAPHY; INPLANE DISTORTION; PATTERN DENSITY; EXPOSURE; PERFORMANCE; RETICLES
Issue Date
2018-05
Publisher
IOP PUBLISHING LTD
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v. 57, No. 6, Article no. 06HA01
Abstract
Thermal and structural deformation of extreme-ultraviolet lithography (EUVL) masks during the exposure process may become important issues as these masks are subject to rigorous image placement and flatness requirements. The reflective masks used for EUVL absorb energy during exposure, and the temperature of the masks rises as a result. This can cause thermomechanical deformation that can reduce the pattern quality. The use of very thick low-thermal-expansion substrate materials (LTEMs) may reduce energy absorption, but they do not completely eliminate mask deformation. Therefore, it is necessary to predict and optimize the effects of energy transferred from the extreme-ultraviolet (EUV) light source and the resultant patterns of structured EUV masks with complex multilayers. Our study shows that heat accumulates in the masks as exposure progresses. It has been found that a higher absorber ratio (pattern density) applied to the patterning of EUV masks exacerbates the problem, especially in masks with more complex patterns. (C) 2018 The Japan Society of Applied Physics.
URI
http://iopscience.iop.org/article/10.7567/JJAP.57.06HA01/metahttp://repository.hanyang.ac.kr/handle/20.500.11754/81195
ISSN
0021-4922
DOI
10.7567/JJAP.57.06HA01
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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