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Optical lithography simulator for the whole resist process

Title
Optical lithography simulator for the whole resist process
Author
오혜근
Keywords
photolithography; lithography simulation; benchmark simulation; process latitude
Issue Date
2006-01
Publisher
Elsevier
Citation
Current Applied Physics, v. 6, No. 1, Page. 48-53
Abstract
A full lithography simulation has become an essential factor for semiconductor manufacturing. We have been researching all kinds of problems for lithography process by creating and using our own simulation tool, which has contributed to extracting parameters related to exposure, post-exposure bake, and development. Also, its performance has been proved in comparison with other simulation tools. In this paper, our lithography simulator and some of its features are introduced. For its benchmark, we describe our own simulators performance and accuracy for whole resist process by the comparison of a commercial tool. The sensitivity of process parameters and process latitude due to its parameters are discussed. (c) 2005 Elsevier B.V. All rights reserved.
URI
https://www.sciencedirect.com/science/article/pii/S156717390400238Xhttp://repository.hanyang.ac.kr/handle/20.500.11754/107594
ISSN
1567-1739; 1878-1675
DOI
10.1016/j.cap.2004.12.003
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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