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Multistack structure for an extreme-ultraviolet pellicle with out-of-band radiation reduction

Title
Multistack structure for an extreme-ultraviolet pellicle with out-of-band radiation reduction
Author
오혜근
Keywords
extreme-ultraviolet lithography; defect-free mask; contaminations; extreme-ultraviolet pellicle; multistack structure; out-of-band radiation
Issue Date
2015-10
Publisher
SPIE-SOC PHOTO-OPTICAL INSTRUMENTATION ENGINEERS
Citation
JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, v. 14, No. 4, Article ID. 43501
Abstract
We report on out-of-band (OoB) radiation that can cause degradation to the image quality in extreme-ultraviolet (EUV) lithography systems. We investigated the effect of OoB radiation with an EUV pellicle and found the maximum allowable reflectivity of OoB radiation from the EUV pellicle that can satisfy certain criteria (i.e., the image critical dimension error, contrast, and normalized image log slope). We suggested a multistack EUV pellicle that can obtain a high EUV transmission, minimal reflectivity of OoB radiation, and sufficient deep ultraviolet transmission for defect inspection and alignment without removing the EUV pellicle in an EUV lithography system. (C) 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)
URI
https://www.spiedigitallibrary.org/journals/Journal-of-MicroNanolithography-MEMS-and-MOEMS/volume-14/issue-4/043501/Multistack-structure-for-an-extreme-ultraviolet-pellicle-with-out-of/10.1117/1.JMM.14.4.043501.full?SSO=1http://hdl.handle.net/20.500.11754/40528
ISSN
1932-5150; 1932-5134
DOI
10.1117/1.JMM.14.4.043501
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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