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Patterning dependence on the mask defect for extreme ultraviolet lithography

Title
Patterning dependence on the mask defect for extreme ultraviolet lithography
Author
오혜근
Keywords
Extreme ultraviolet lithography; Lithography; Metals; Particles; Photomasks; Aerial images; Arbitrary shape; CD errors; CD variation; Critical dimension; Critical size; Extinction coefficients; Mask defects; Defects
Issue Date
2015-04
Publisher
SPIE
Citation
Proceedings of SPIE - The International Society for Optical Engineering, V. 9658, Article ID 965813
Abstract
We studied various particle defects such as Fe, Al, and SiO2 which are frequently generated during extreme ultraviolet lithography (EUVL). It is important to find the critical sizes of the defect that do not make 10% critical dimension (CD) error because the defect causes CD variation. We found that the critical size of a defect was dependent on the extinction coefficient of the defect material and the particle defect with larger extinction coefficient made smaller critical size that could make 10% CD error. In addition it is needed to study the critical size of the defect which is located on the side of the absorber because it is hard to clean the location. We investigated the defect, which was located on the left side of absorber, affect more on patterning. Also arbitrary shape of defect is studied. As a result, the aerial image is most sensitive with defect area over the length and the height of the defect. © 2015 SPIE.
URI
https://www.scopus.com/record/display.uri?eid=2-s2.0-84939248951&origin=inward&txGid=a0a9cebbef999b59bff126e89449959bhttp://hdl.handle.net/20.500.11754/37021
ISBN
978-162841871-2
ISSN
0277-786X
DOI
10.1117/12.2197751
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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