| 2007-01 | Acid Diffusion Length Corresponding to Post Exposure Bake Time and Temperature | 오혜근 |
| 2008-11 | Acid diffusion length dependency for 32 nm node attenuated and chromeless phase shift mask | 오혜근 |
| 2007-09 | Acid diffusion length limitation for 45 nm node attenuated and chromeless phase shift mask | 오혜근 |
| 2008-06 | Aerial Image Characteristics of a Modified Absorber Model for Extreme Ultraviolet Lithography (EUVL) | 오혜근 |
| 2004-11 | Aerial image characterization for defects in an extreme-ultraviolet mask | 오혜근 |
| 2004-05 | Aerial image characterization for the defects in the extreme ultraviolet mask | 오혜근 |
| 2003-12 | Aerial image prediction for mask defect in extreme ultraviolet lithography | 오혜근 |
| 2004-11 | Angular dependency of off-axis illumination on 100 nm width pattern printability for extreme ultraviolet lithography: Ru/Mo/Si reflector system | 오혜근 |
| 2008-06 | Anisotropic resist reflow process simulation for 22 nm elongated contact holes | 오혜근 |
| 2016-08 | Anisotropic shadow effects with various pattern directions in an anamorphic high numerical aperture system | 오혜근 |
| 2008-05 | Application of ellipsometry in immersion lithography | 오혜근 |
| 2017-03 | Arc-shaped slit effect of EUV lithography with anamorphic high NA system in terms of critical dimension variation | 오혜근 |
| 2005-06 | ArF photoresist parameter optimization for mask error enhancement factor reduction | 오혜근 |
| 2005-10 | ArF photoresist parameter optimization for mask error enhancement factor reduction | 오혜근 |
| 2004-11 | Bulk effects of the thermal flow resists | 오혜근 |
| 2005-06 | Bulk effects of thermal flow resists | 오혜근 |
| 2002-10 | Bulk Image Formation of Scalar Modeling in a Photoresist | 오혜근 |
| 2005-06 | Calibration-Free Multichannel Ellipsometry for Retardance Measurement | 오혜근 |
| 2017-03 | CD Error Caused by Aberration and Its Possible Compensation by Optical Proximity Correction in Extreme-Ultraviolet Lithography | 오혜근 |
| 2002-03 | CD Prediction by Threshold Energy Resist Model | 오혜근 |
| 2007-02 | Characteristics and prevention of pattern collapse in EUV lithography | 오혜근 |
| 1999-12 | Characteristics of 193 nm chemically amplified resist during post exposure bake and post exposure delay | 오혜근 |
| 1999-12 | Characteristics of 193 nm chemically amplified resist during post exposure bake and post exposure delayCharacteristics of 193 nm chemically amplified resist during post exposure bake and post exposure delayCharacteristics of 193 nm chemically amplified resist during post exposure bake and post exposure delay | 오혜근 |
| 2006-11 | Chromeless phase lithography using scattering bars and zebra patterns | 오혜근 |
| 2005-03 | Contact hole reflow by finite element method | 오혜근 |
| 2008-02 | Critical dimension control for 32 nm node random contact hole array using resist reflow process | 오혜근 |
| 2007-09 | Critical dimension control for 32 nm random contact hole array with resist reflow process | 오혜근 |
| 2017-09 | Critical dimension variation caused by wrinkle in extreme ultra-violet pellicle for 3-nm node | 오혜근 |
| 2005-11 | Defect characterization of Ru/Mo/Si EUV reflector by optical modeling | 오혜근 |
| 2005-07 | Determination of the optical functions of various liquids by rotating compensator multichannel spectroscopic ellipsometry | 오혜근 |
