Arc-shaped slit effect of EUV lithography with anamorphic high NA system in terms of critical dimension variation

Title
Arc-shaped slit effect of EUV lithography with anamorphic high NA system in terms of critical dimension variation
Author
오혜근
Keywords
Extreme ultraviolet lithography
Issue Date
2017-03
Publisher
SPIE
Citation
Proceedings of SPIE - The International Society for Optical Engineering, V. 10143
Abstract
EUV lithography is one of the promising technologies for 1X nm patterning. EUV lithography has high resolution capability because of short wavelength of source but it has some particular patterning problems which are not appeared a t optical lithography. Owing to reflective optics, EUV light incidents obliquely in mask and oblique incidence of EUV lithography leads shadow effect and arc-shaped exposure slit. The study of these particular optical problems are required for optical proximity correction (OPC). Arc-shaped exposure slit leads azimuthal angle variation, incident angle variation , and variation of shadow width. With these variations along exposure slit, patterning result is varied along the exposure slit. With understanding of these particular optical problems, lots of EUV OPC studies have been presented with 0.33 conventional NA system. However, suggested anamorphic high NA system has not only elliptical shaped mask NA and also different angle distribution. The incident angle variation as a function of azimuthal angle is different between isomorphic and anamorphic NA systems. In case of anamorphic NA system, incident angle distribution is decreased on horizontal direction but it is larger on vertical direction compared with case of isomorphic NA system. These differences make different arc-shaped slit effect. CD variation as a function of azimuthal angle is different between isomorphic and a namorphic NA systems. The study of CD variation along the exposure slit is very helpful for OPC in EUV lithography. © 2017 SPIE.
URI
https://www.spiedigitallibrary.org/conference-proceedings-of-spie/10143/1/Arc-shaped-slit-effect-of-EUV-lithography-with-anamorphic-high/10.1117/12.2258188.full?SSO=1http://repository.hanyang.ac.kr/handle/20.500.11754/71823
ISSN
0277-786X
DOI
10.1117/12.2258188
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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