Critical dimension control for 32 nm node random contact hole array using resist reflow process

Title
Critical dimension control for 32 nm node random contact hole array using resist reflow process
Author
오혜근
Keywords
resist reflow process; optical proximity correction; contact hole; viscosity; bulk effect
Issue Date
2008-02
Publisher
INST PURE APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v. 47, No. 2, Page. 1158-1160
Abstract
A 50nm contact hole (CH) random array fabricated by resist reflow process (RRP) was studied to produce 32nm node devices. RRP is widely used for mass production of semiconductor devices, but. RRP has some restrictions because the reflow strongly depends on the array, pitch, and shape of CH. Thus, we must have full knowledge on pattern dependency after RRP, and we need to have an optimum optical proximity corrected mask including RRP to compensate the pattern dependency in random array. To fabricate optimum optical proximity- and RRP-corrected mask, we must have a better understanding of how much resist flows and CH locations after RRP. A simulation is carried out to correctly predict the RRP result by including RRP parameters such as viscosity, adhesion force, surface tension, and location of CH. As a result, we obtained uniform 50 nm CH patterns even for the random and differently shaped CH arrays by optical proximity-corrected RRP.
URI
http://iopscience.iop.org/article/10.1143/JJAP.47.1158/metahttp://repository.hanyang.ac.kr/handle/20.500.11754/76809
ISSN
0021-4922
DOI
10.1143/JJAP.47.1158
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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