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Characteristics and prevention of pattern collapse in EUV lithography

Title
Characteristics and prevention of pattern collapse in EUV lithography
Author
오혜근
Keywords
Adhesion; Deformation length; Lithography; Resist pattern collapse; Young's modulus
Issue Date
2007-02
Publisher
SPIE
Citation
Proceedings of SPIE - The International Society for Optical Engineering, v. 6517, Article no. 65172S
Abstract
Pattern collapse for line widths under 32 nm printed by extreme ultra-violet lithography (EUVL) is investigated by using commercial tools. Pattern collapse phenomenon occurs very often in actual process. Pattern collapse means that pattern is bending, peel-off, and break of the resist, thus it affects the production and yield of semiconductor. In this paper, we newly defined and investigated the critical aspect ratio. Pattern collapse happens if the critical aspect ratio is smaller than aspect ratio. Because EUV resist has smaller adhesive strength than currently available DUV and ArF resists, EUV resist easily collapse more easily than DUV resist does. This phenomenon is successfully modeled.
URI
https://www.spiedigitallibrary.org/conference-proceedings-of-spie/6517/1/Characteristics-and-prevention-of-pattern-collapse-in-EUV-lithography/10.1117/12.712469.fullhttp://repository.hanyang.ac.kr/handle/20.500.11754/106251
ISSN
0277-786X
DOI
10.1117/12.712469
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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