Anisotropic resist reflow process simulation for 22 nm elongated contact holes

Title
Anisotropic resist reflow process simulation for 22 nm elongated contact holes
Author
오혜근
Keywords
resist reflow; elongated contact hole; 22 nm pattern; optical proximity correction
Issue Date
2008-06
Publisher
INST PURE APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v. 47, No. 6, Page. 4940-4943
Abstract
Pattern size decreases as circuit integration increases. Resistance increases as the cross section of a contact hole (CH) decreases. Thus, the use of an elongated CH is suggested as a method of solving this problem. It is too difficult to obtain a small CH and an elongated CH by optical proximity correction only. Even if double patterning can be used to improve the integration of line and space, it is not easy to apply it to form an elongated CH. We suggest the use of a resist reflow process method to form 22 nm elongated CHs from a large developed size pattern. We observed RRP behavior in elongated CHs by experiment and simulation, and applied optical proximity correction to compensate the bulk effect after the resist reflow process. As a result, we made uniform 22 nm elongated CHs.
URI
http://iopscience.iop.org/article/10.1143/JJAP.47.4940/metahttp://repository.hanyang.ac.kr/handle/20.500.11754/80423
ISSN
0021-4922
DOI
10.1143/JJAP.47.4940
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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