Acid diffusion length dependency for 32 nm node attenuated and chromeless phase shift mask

Title
Acid diffusion length dependency for 32 nm node attenuated and chromeless phase shift mask
Author
오혜근
Keywords
32 nm node; Acid diffusion length; Attenuated phase shift mask; Chromeless phase lithography; Immersion lithography; Post exposure bake
Issue Date
2008-11
Publisher
SPIE
Citation
Proceedings of SPIE - The International Society for Optical Engineering, v. 7140, Article no. 71403U
Abstract
We applied the immersion lithography to get 32 nm node pattern with 1.55 NA, without using double exposure / double patterning. A chromeless phase shift mask is compared with an attenuated phase shift mask to make 32 nm dense 1:1 line and space pattern. We compared the aerial image, normalized image log slope, exposure latitude, and depth of focus for each mask type in order to see the effect of the post exposure bake and acid diffusion length. The process window shrinks fast if the diffusion length is larger than 10 nm for both mask types. However, up to 20 nm diffusion length, 32 nm can be processible if the exposure latitude of 5 % is used in production. © 2008 SPIE.
URI
https://www.spiedigitallibrary.org/conference-proceedings-of-spie/7140/1/Acid-diffusion-length-dependency-for-32-nm-node-attenuated-and/10.1117/12.804611.fullhttp://repository.hanyang.ac.kr/handle/20.500.11754/80773
ISSN
0277-786X
DOI
10.1117/12.804611
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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