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Critical dimension control for 32 nm random contact hole array with resist reflow process

Title
Critical dimension control for 32 nm random contact hole array with resist reflow process
Author
오혜근
Keywords
Bulk effect; Contact hole; Optical proximity correction; Resist reflow process; Viscosity
Issue Date
2007-09
Publisher
SPIE
Citation
Proceedings of SPIE - The International Society for Optical Engineering, v. 6730, Article no. 673043
Abstract
50 nm random contact hole array by resist reflow process (RRP) was studied to make 32 nm node device. Patterning of smaller contact hole array is harder than patterning the line and space. RRP has a lot of advantages, but RRP strongly depends on pattern array, pitch, and shape. Thus, we must have full knowledge for pattern dependency after RRP, and then we need to have optimum optical proximity corrected mask including RRP to compensate the pattern dependency in random array. To make optimum optical proximity and RRP corrected mask, we must have better understanding that how much resist flows and where the contact hole locations are after RRP. A simulation is made to correctly predict RRP result by including the RRP parameters such as viscosity, adhesion force, surface tension and location of the contact hole. As a result, we made uniform 50 nm contact hole patterns even for the random contact hole array and for different shaped contact hole array by optical proximity corrected RRP.
URI
https://www.spiedigitallibrary.org/conference-proceedings-of-spie/6730/673043/Critical-dimension-control-for-32-nm-random-contact-hole-array/10.1117/12.746518.fullhttp://repository.hanyang.ac.kr/handle/20.500.11754/106919
ISBN
978-081946887-1
ISSN
0277-786X
DOI
10.1117/12.746518
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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