| 2008-11 | Heat conduction to photoresist on top of wafer during post exposure bake process:II. Application | 오혜근 |
| 2017-03 | Impact of non-uniform wrinkles for a multi-stack pellicle in EUV lithography | 오혜근 |
| 2016-05 | The impact of the residual stress on the EUV pellicle | 오혜근 |
| 2017-01 | Impact of transmission non-uniformity of a wrinkled EUV pellicle for N5 patterning under various illuminations | 오혜근 |
| 2006-02 | Improvement of column spacer uniformity in a TFT LCD panel | 오혜근 |
| 2017-06 | Influence of a non-ideal sidewall angle of extreme ultra-violet mask absorber for 1×-nm patterning in isomorphic and anamorphic lithography | 오혜근 |
| 2017-10 | Influence of a wrinkle in terms of critical dimension variation caused by transmission nonuniformity and a particle defect on extreme ultraviolet pellicle | 오혜근 |
| 2008-12 | Influence of mask feature on the diffracted light in proximity and contact lithography | 오혜근 |
| 2016-09 | Influence of non-uniform intensity distribution of deformed pellicle for N7 patterning | 오혜근 |
| 2006-08 | The influence of transmission reduction by mask haze formation in ArF lithography | 오혜근 |
| 2008-11 | Influence of Various Defects on Extreme Ultra-Violet Mask | 오혜근 |
| 2006-11 | Investigation of optimum biasing and undercut for single trench alternating phase shift mask in 193 nm lithography | 오혜근 |
| 2009-06 | Investigation of Resolution Enhancement by Using Interferometric Immersion Lithography with a Lloyd Mirror | 오혜근 |
| 2005-07 | Lens aberration effect on the line width for different pattern shapes and duty ratios | 오혜근 |
| 2000-12 | Line Width Variation due to Global Topography | 오혜근 |
| 2005-03 | Line width variation with absorber thickness in extreme ultraviolet lithography | 오혜근 |
| 2005-08 | Line-width variation with absorber thickness in extreme ultraviolet lithography | 오혜근 |
| 2003-02 | Lithography Process Optimization Simulator for an Illumination System | 오혜근 |
| 2005-10 | Mask Error Enhancement Factor Variation with Pattern Density | 오혜근 |
| 2006-02 | Mask error enhancement factor variation with pattern density for 65 nm and 90 nm line widths | 오혜근 |
| 2008-11 | A mask generation approach to double patterning technology with inverse lithography | 오혜근 |
| 2006-06 | Mask haze measurement by spectroscopic ellipsometry | 오혜근 |
| 2016-05 | Mask three-dimensional effects of etched multilayer mask for 16-nm half-pitch in extreme ultraviolet lithography | 오혜근 |
| 2016-09 | Mechanical stress induced by external forces in the extreme ultraviolet pellicle | 오혜근 |
| 2006-08 | Modeling for Resist Reflow of an Elongated Contact Hole | 오혜근 |
| 2018-05 | modeling of thermomechanical changes of euv mask and their dependence on absorber variation | 오혜근 |
| 2002-04 | Modification of the Development Parameter for a Chemically Amplified Resist SimulatorModification of the Development Parameter for a Chemically Amplified Resist SimulatorModification of the Development Parameter for a Chemically Amplified Resist SimulatorModification of the Development Parameter for a Chemically Amplified Resist SimulatorModification of the Development Parameter for a Chemically Amplified Resist SimulatorModification of the development parameter for a chemically amplified resist simulator | 오혜근 |
| 2003-12 | Muller matrix ellipsometry 제작 및 응용 | 오혜근 |
| 2015-10 | Multistack structure for an extreme-ultraviolet pellicle with out-of-band radiation reduction | 오혜근 |
| 2016-03 | Non-isotropic shadow effect with various pattern direction in anamorphic high numerical aperture system | 오혜근 |
