Influence of a non-ideal sidewall angle of extreme ultra-violet mask absorber for 1×-nm patterning in isomorphic and anamorphic lithography

Title
Influence of a non-ideal sidewall angle of extreme ultra-violet mask absorber for 1×-nm patterning in isomorphic and anamorphic lithography
Author
오혜근
Keywords
EUVL; EUV mask; Absorber; High NA; Sidewall angle
Issue Date
2017-06
Publisher
ELSEVIER SCIENCE BV
Citation
MICROELECTRONIC ENGINEERING, v. 181, Page. 1-9
Abstract
The impact of non-ideal absorber sidewall angle (SWA) has been a serious problem as target pattern sizes have been reduced. During mask fabrication, it is difficult to obtain an absorber sidewall angle of 90 degrees due to the imperfect etching process. Furthermore, it is known that repeated mask cleaning processes can worsen this problem. We investigated various patterning results of non-ideal absorbers with sidewall angles < 90 degrees. Moreover, we simulated how this affects anamorphic high-numerical aperture (NA) patterning for targeted patterns of 7 nm node and smaller. The resist critical dimension (CD) can be varied by about 20% with a 5 degrees variation in the SWA for a horizontal 1 6 nm 1:1 periodic line and space pattern compared to a target CD. For an anamorphic high-NA system, the CD variation caused by the SWA effect is larger in the vertical direction than it is in the horizontal direction due to the asymmetric reduction ratio on the anamorphic mask (4x/8y), which is different from the isomorphic mask (4x/4y). Thus, we must determine the horizontal-vertical bias (H-V bias) generated by non ideal absorbers in the anamorphic system. Decreasing the SWA from 90 degrees to 85 degrees increased the HV bias of a 10 nm 1:1 line and space pattern by 52%. (C) 2017 Elsevier B.V. All rights reserved.
URI
https://www.sciencedirect.com/science/article/pii/S0167931717302988http://repository.hanyang.ac.kr/handle/20.500.11754/72159
ISSN
0167-9317; 1873-5568
DOI
10.1016/j.mee.2017.06.007
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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