| 2007-01 | Acid Diffusion Length Corresponding to Post Exposure Bake Time and Temperature | 오혜근 |
| 2008-11 | Acid diffusion length dependency for 32 nm node attenuated and chromeless phase shift mask | 오혜근 |
| 2007-09 | Acid diffusion length limitation for 45 nm node attenuated and chromeless phase shift mask | 오혜근 |
| 2008-06 | Aerial Image Characteristics of a Modified Absorber Model for Extreme Ultraviolet Lithography (EUVL) | 오혜근 |
| 2004-11 | Aerial image characterization for defects in an extreme-ultraviolet mask | 오혜근 |
| 2004-05 | Aerial image characterization for the defects in the extreme ultraviolet mask | 오혜근 |
| 2003-12 | Aerial image prediction for mask defect in extreme ultraviolet lithography | 오혜근 |
| 2004-11 | Angular dependency of off-axis illumination on 100 nm width pattern printability for extreme ultraviolet lithography: Ru/Mo/Si reflector system | 오혜근 |
| 2008-06 | Anisotropic resist reflow process simulation for 22 nm elongated contact holes | 오혜근 |
| 2016-08 | Anisotropic shadow effects with various pattern directions in an anamorphic high numerical aperture system | 오혜근 |
| 2008-05 | Application of ellipsometry in immersion lithography | 오혜근 |
| 2017-03 | Arc-shaped slit effect of EUV lithography with anamorphic high NA system in terms of critical dimension variation | 오혜근 |
| 2005-06 | ArF photoresist parameter optimization for mask error enhancement factor reduction | 오혜근 |
| 2005-10 | ArF photoresist parameter optimization for mask error enhancement factor reduction | 오혜근 |
| 2004-11 | Bulk effects of the thermal flow resists | 오혜근 |
| 2005-06 | Bulk effects of thermal flow resists | 오혜근 |
| 2002-10 | Bulk Image Formation of Scalar Modeling in a Photoresist | 오혜근 |
| 2005-06 | Calibration-Free Multichannel Ellipsometry for Retardance Measurement | 오혜근 |
| 2017-03 | CD Error Caused by Aberration and Its Possible Compensation by Optical Proximity Correction in Extreme-Ultraviolet Lithography | 오혜근 |
| 2002-03 | CD Prediction by Threshold Energy Resist Model | 오혜근 |
