2016-09 | Low Gate Leakage Current and Interface State Density of Atomic Layer Deposition Al2O3 SiC MOS Device with NH3 Plasma Treatment | 최창환 |
2022-12 | Low temperature (< 150? Text Color) annealed amorphous indium-gallium-tin oxide (IGTO) thin-film for flash memory application | 최창환 |
2022-01 | Memory characteristics of thin film transistor with catalytic metal layer induced crystallized indium-gallium-zinc-oxide (IGZO) channel | 최창환 |
2020-05 | Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si Substrate | 최창환 |
2022-09 | Memristive Switching and Density-Functional Theory Calculations in Double Nitride Insulating Layers | 최창환 |
2011-03 | Millisecond Flash Annealing as a Flatband Voltage Shift Enabler for p-Type Metal-Oxide-Semiconductor Devices with High-k/Metal Gate | 최창환 |
2020-03 | Monolithic 3D Integration of InGaAs Photodetectors on Si MOSFETs Using Sequential Fabrication Process | 최창환 |
2022-03 | Monolithic 3D Integration Process and Its Device Applications | 최창환 |
2022-03 | Monolithic 3D Integration With Photosensor and CMOS Circuits Using Ion-Cut Layer Transfer | 최창환 |
2019-09 | A Neuromorphic Device Implemented on a Salmon-DNA Electrolyte and its Application to Artificial Neural Networks | 최창환 |
2016-04 | Non-Alloyed Ohmic Contacts on GaAs Using Metal-Interlayer-Semiconductor Structure With SF6 Plasma Treatment | 최창환 |
2020-12 | A Novel Structure and Operation Scheme of Vertical Channel NAND Flash with Ferroelectric Memory for Multi String Operations | 최창환 |
2019-08 | The observation of resistive switching characteristics using transparent and biocompatible Cu2+-doped salmon DNA composite thin film | 최창환 |
2020-10 | Optically Excited Threshold Switching Synapse Characteristics on Nitrogen-doped Graphene Oxide Quantum Dots (N-GOQDs) | 최창환 |
2022-04 | Optimizing the thickness of Ta2O5 interfacial barrier layer to limit the oxidization of Ta ohmic interface and ZrO2 switching layer for multilevel data storage | 최창환 |
2020-12 | Partially Oxidized MXene Ti3C2Tx Sheets for Memristor having Synapse and Threshold Resistive Switching Characteristics | 최창환 |
2012-10 | Performance of organic field effect transistors with high-k gate oxide after application of consecutive bias stress | 최창환 |
2012-06 | Plasma atomic layer deposited TiN metal gate for three dimensional device applications: Deposition temperature, capping metal and post annealing | 최창환 |
2016-11 | The Post Annealing to Control the Number of Layers of 2D MoS2 and SnS2 | 최창환 |
2020-01 | Rapid thermal annealing on the atomic layer-deposited zirconia thin film to enhance resistive switching characteristics | 최창환 |
2012-10 | Remote NH3 plasma passivation on the interface between the remote plasma Al2O3 atomic layer deposited and 6H SiC substrate | 최창환 |
2015-11 | Remote plasma atomic layer deposited Al2O3 4H SiC MOS capacitor with remote H-2 plasma passivation and post metallization annealing | 최창환 |
2016-12 | Residue-Free Silver Nano Patterns Fabricated by Reverse Direct Imprinting | 최창환 |
2011-02 | Ruthenium based metals using atomic vapor deposition for gate electrode applications | 최창환 |
2019-05 | Silver-Adapted Diffusive Memristor Based on Organic Nitrogen-Doped Graphene Oxide Quantum Dots (N-GOQDs) for Artificial Biosynapse Applications | 최창환 |
2012-10 | Site-specific synthesis of ZnO nanocrystalline networks via a hydrothermal method | 최창환 |
2012-06 | SnO2 encapsulated TiO2 hollow nanofibers as anode material for lithium ion batteries | 최창환 |
2020-09 | Stabilized and RESET-voltage controlled multi-level switching characteristics in ZrO2-based memristors by inserting a-ZTO interface layer | 최창환 |
2018-08 | Structural engineering of tantalum oxide based memristor and its electrical switching responses using rapid thermal annealing | 최창환 |
2013-11 | Structural, optical and chemical analysis of zinc sulfide thin film deposited by RF-mganetron sputtering and post deposition annealing | 최창환 |