Ruthenium based metals using atomic vapor deposition for gate electrode applications
- Title
- Ruthenium based metals using atomic vapor deposition for gate electrode applications
- Author
- 최창환
- Keywords
- HYDROGEN; LAYERS; FILMS; TRANSISTORS; TECHNOLOGY; RU
- Issue Date
- 2011-02
- Publisher
- AMERICAN INSTITUTE OF PHYSICS
- Citation
- Applied Physics Letters, 21 February 2011, 98(8), 083506
- Abstract
- The impacts of ruthenium-based metal gate electrodes (Ru, RuOx, RuSiOx) with atomic vapor deposition (AVD) on flatband voltage (V-FB) and equivalent oxide thickness (EOT) are demonstrated using a low temperature (<400 degrees C) process. Increasing thickness of Ru and RuOx exhibits higher V-FB, attributed to filling oxygen vacancies [V-o] in high-k gate dielectric with oxygen supplied from AVD metal gate electrodes upon annealing. Ru is efficient to attain a higher work-function and thinner EOT compared to RuOx and RuSiOx. Subsequent physical-vapor-deposition (PVD) TiN capping on AVD metals blocks oxygen out-diffusion, leading to higher V-FB than PVD W or AVD TiN capping. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3559929]
- URI
- https://aip.scitation.org/doi/abs/10.1063/1.3559929
- ISSN
- 0003-6951
- DOI
- 10.1063/1.3559929
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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