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Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si Substrate

Title
Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si Substrate
Author
최창환
Keywords
memristor; silicon nitride; boron nitride; neuromorphic computing; resistive switching
Issue Date
2020-05
Publisher
MDPI
Citation
NANOMATERIALS, v. 10, no. 5, article no. 994
Abstract
Brain-inspired artificial synaptic devices and neurons have the potential for application in future neuromorphic computing as they consume low energy. In this study, the memristive switching characteristics of a nitride-based device with two amorphous layers (SiN/BN) is investigated. We demonstrate the coexistence of filamentary (abrupt) and interface (homogeneous) switching of Ni/SiN/BN/n(++)-Si devices. A better gradual conductance modulation is achieved for interface-type switching as compared with filamentary switching for an artificial synaptic device using appropriate voltage pulse stimulations. The improved classification accuracy for the interface switching (85.6%) is confirmed and compared to the accuracy of the filamentary switching mode (75.1%) by a three-layer neural network (784 x 128 x 10). Furthermore, the spike-timing-dependent plasticity characteristics of the synaptic device are also demonstrated. The results indicate the possibility of achieving an artificial synapse with a bilayer SiN/BN structure.
URI
https://www.mdpi.com/2079-4991/10/5/994https://repository.hanyang.ac.kr/handle/20.500.11754/166287
ISSN
2079-4991
DOI
10.3390/nano10050994
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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