Millisecond Flash Annealing as a Flatband Voltage Shift Enabler for p-Type Metal-Oxide-Semiconductor Devices with High-k/Metal Gate
- Title
- Millisecond Flash Annealing as a Flatband Voltage Shift Enabler for p-Type Metal-Oxide-Semiconductor Devices with High-k/Metal Gate
- Author
- 최창환
- Keywords
- CMOS
- Issue Date
- 2011-03
- Publisher
- ELECTROCHEMICAL SOC INC, 65 SOUTH MAIN STREET, PENNINGTON, NJ 08534 USA
- Citation
- ELECTROCHEMICAL AND SOLID STATE LETTERS,권: 14 호: 6 페이지: H241-H243
- Abstract
- We have investigated the effects of millisecond flash annealing (ms-FLA) on the electrical properties of p-type metal-oxide-semiconductor (pMOS) devices with high-k gate dielectrics with TiN gate. Compared to conventional rapid thermal annealing (RTA), ms-FLA improves pMOS characteristics such as positive flatband voltage (V(FB)) shift along with scaled equivalent oxide thickness (EOT) and negligible gate leakage degradation, attributed to the suppressed oxygen vacancies [V(o)(2+)] generation in high-k gate dielectrics due to a shorter thermal budget. Al-containing capping layers, TiN thickness, and Si cap deposition temperatures with ms-FLA substantially affect thermally generated [V(o)(2+)], leading to different V(FB) and EOT. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3566073] All rights reserved.
- URI
- http://esl.ecsdl.org/content/14/6/H241http://hdl.handle.net/20.500.11754/35560
- ISSN
- 1099-0062
- DOI
- 10.1149/1.3566073
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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