Remote NH3 plasma passivation on the interface between the remote plasma Al2O3 atomic layer deposited and 6H SiC substrate
- Title
- Remote NH3 plasma passivation on the interface between the remote plasma Al2O3 atomic layer deposited and 6H SiC substrate
- Author
- 최창환
- Keywords
- SiC; ALD Al2O3; Plasma Passivation
- Issue Date
- 2012-10
- Publisher
- Korean ASSOC Crystal Growth, INC
- Citation
- Journal of Ceramic Processing Research, OCT 2012, 13(5), P.657-661
- Abstract
- We investigated the effects of remote NH3 plasma passivation on the interfacial properties between 6H SiC substrate and Al2O3 gate dielectric deposited by remote-plasma atomic layer deposition in a metal-oxide-semiconductor device. X-ray photoelectron spectroscopy and Auger emission spectroscopy analysis reveal that nitrogen is clearly incorporated into the Al2O3/SiC interface. Atomic force microscopy shows negligible damage on the plasma treated SiC surface. A lower leakage current and higher breakdown voltage are attained by the remote plasma passivation. The interfacial state density of the as-deposited sample with the NH3 treatment is about 4 times lower than that of sample without nitrogen passivation and post forming gas annealing improves the interface quality further.
- URI
- http://jcpr.kbs-lab.co.kr/file/JCPR_vol.13_2012/JCPR13-5/13_5657.pdfhttps://repository.hanyang.ac.kr/handle/20.500.11754/70627
- ISSN
- 1229-9162
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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