Memory characteristics of thin film transistor with catalytic metal layer induced crystallized indium-gallium-zinc-oxide (IGZO) channel
- Title
- Memory characteristics of thin film transistor with catalytic metal layer induced crystallized indium-gallium-zinc-oxide (IGZO) channel
- Author
- 최창환
- Keywords
- CAAC-IGZO; High-k; NAND flash; Thin film transistor
- Issue Date
- 2022-01
- Publisher
- MDPI
- Citation
- Electronics (Switzerland), v. 11, NO. 1, article no. 53, Page. 1-12
- Abstract
- The memory characteristics of a flash memory device using c-axis aligned crystal indium gallium zinc oxide (CAAC-IGZO) thin film as a channel material were demonstrated. The CAAC-IGZO thin films can replace the current poly-silicon channel, which has reduced mobility because of grain-induced degradation. The CAAC-IGZO thin films were achieved using a tantalum catalyst layer with annealing. A thin film transistor (TFT) with SiO2/Si3N4/Al2O3 and CAAC-IGZO thin films, where Al2O3 was used for the tunneling layer, was evaluated for a flash memory application and compared with a device using an amorphous IGZO (a-IGZO) channel. A source and drain using indium-tin oxide and aluminum were also evaluated for TFT flash memory devices with crystallized and amorphous channel materials. Compared with the a-IGZO device, higher on-current (Ion), improved field effect carrier mobility (µFE), a lower body trap (Nss), a wider memory window (∆Vth), and better retention and endurance characteristics were attained using the CAAC-IGZO device.
- URI
- https://www.mdpi.com/2079-9292/11/1/53https://repository.hanyang.ac.kr/handle/20.500.11754/178307
- ISSN
- 2079-9292;2079-9292
- DOI
- 10.3390/electronics11010053
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
- Files in This Item:
- Memory Characteristics of Thin Film Transistor with Catalytic Metal Layer Induced Crystallized Indium-Gallium-Zinc-Oxide (IGZO) Channel.pdfDownload
- Export
- RIS (EndNote)
- XLS (Excel)
- XML