2012-10 | Effect of Al incorporation on the performance and reliability of p-type metal-oxide-semiconductor field effect transistors | 최창환 |
2016-12 | The Effect of Interfacial Dipoles on the Metal-Double Interlayers-Semiconductor Structure and Their Application in Contact Resistivity Reduction | 최창환 |
2016-11 | The Effect of Post-Fabrication Annealing on an Amorphous IGZO Visible-Light Photodetector | 최창환 |
2014-09 | The effect of the annealing temperature on the transition from conductor to semiconductor behavior in zinc tin oxide deposited atomic layer deposition | 최창환 |
2022-03 | The effective Work-Function of atomic layer deposited TaN thin film using TBTDET precursor and NH3 reactant gas | 최창환 |
2015-11 | The effects of (NH4)(2)S-x treatment on n-GaN MOS device with nano-laminated ALD HfAlOx and Ru gate stack | 최창환 |
2016-11 | The Effects of a Thermal Recovery Process in In-Ga-Zn-O (IGZO) Thin Films Transistor | 최창환 |
2013-03 | Effects of composition and thickness of TiN metal gate on the equivalent oxide thickness and flat-band voltage in metal oxide semiconductor devices | 최창환 |
2022-10 | Effects of etching process and annealing temperature on the ferroelectric properties of atomic layer deposited Al-doped HfO2 thin film | 최창환 |
2011-05 | The effects of post-annealing on the performance of ZnO thin film transistors | 최창환 |
2017-05 | The effects of process temperature on the work function modulation of ALD HfO2 MOS device with plasma enhanced ALD TiN metal gate using TDMAT precursor | 최창환 |
2017-04 | The Effects of Substrate Temperature on the Properties of Kesterite Cu2ZnSnS4 Thin Films Deposited Using a Single Quaternary Target | 최창환 |
2012-10 | The electrical and structural properties of HfO2/SrTiO3 stacked gate dielectric with TiN metal gate electrode | 최창환 |
2015-11 | Electrical characteristics of ALD La2O3 capping layers using different lanthanum precursors in MOS devices with ALD HfO2, HfSiOx, and HfSiON gate dielectrics | 최창환 |
2021-11 | Emulating synaptic plasticity and resistive switching characteristics through amorphous Ta2O5 embedded layer for neuromorphic computing | 최창환 |
2018-08 | Engineering synaptic characteristics of TaOx/HfO2 bi-layered resistive switching device | 최창환 |
2012-08 | Fabrication, structure, and photoluminescence of GeO2/ZnO core-shell nanorods | 최창환 |
2017-09 | Fermi-Level Unpinning Technique with Excellent Thermal Stability. for n-Type Germanium | 최창환 |
2015-09 | Fermi-Level Unpinning Using a Ge-Passivated Metal-Interlayer-Semiconductor Structure for Non-Alloyed Ohmic Contact of High-Electron-Mobility Transistors | 최창환 |
2020-11 | Filamentary and interface switching of CMOS-compatible Ta2O5 memristor for non-volatile memory and synaptic devices | 최창환 |
2019-10 | Gate Voltage Dependence of Low Frequency Noise in Tunneling Field Effect Transistors | 최창환 |
2012-10 | Growth of single crystal GaAs nanowires by a surface diffusion-mediated solid-liquid-solid process | 최창환 |
2016-08 | High-Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment | 최창환 |
2016-06 | A High-Performance WSe2/h-BN Photodetector using a Triphenylphosphine (PPh3)-Based n-Doping Technique | 최창환 |
2019-10 | Highly Sensitive and Full Range Detectable Humidity Sensor using PEDOT:PSS, Methyl Red and Graphene Oxide Materials | 최창환 |
2019-11 | Hot-Carrier Degradation Estimation of a Silicon-on-Insulator Tunneling FET Using Ambipolar Characteristics | 최창환 |
2011-03 | Impact of diffusionless anneal using dynamic surface anneal on the electrical properties of a high-k/metal gate stack in metal-oxide-semiconductor devices | 최창환 |
2022-06 | Improved analog switching characteristics of Ta2O5-based memristor using indium tin oxide buffer layer for neuromorphic computing | 최창환 |
2015-01 | Improved high temperature integration of Al2O3 on MoS2 by using a metal oxide buffer layer | 최창환 |
2017-05 | Improved performance of gate-last FDSOI tunnel field-effect-transistors (TFETs) with modulating Al2O3 composition in atomic layer deposited HfAlOx gate dielectrics | 최창환 |