Effects of composition and thickness of TiN metal gate on the equivalent oxide thickness and flat-band voltage in metal oxide semiconductor devices
- Title
- Effects of composition and thickness of TiN metal gate on the equivalent oxide thickness and flat-band voltage in metal oxide semiconductor devices
- Author
- 최창환
- Keywords
- High-k gate dielectric; Metal gate; Flat-band voltage; CMOS integration
- Issue Date
- 2013-03
- Publisher
- Elsevier B.V.
- Citation
- Microelectronic Engineering, Volume 109, September 2013, Pages 160-162
- Abstract
- We investigated the effects of gas flow rates during sputtering and thickness of TiN metal gate on the equivalent oxide thickness (EOT) and flat band voltage (VFB) in the gate-first (GF) processed metal oxide semiconductor (MOS) devices with HfO2 and HfSiON-based gate dielectrics. For both HfO2 and HfiSON devices, more metallic TiN causes thinner EOT with lower VFB while higher VFB is observed along with thicker EOT for nitrogen-rich TiN case. Also, thicker TiN induces more positive VFB shift. However, for HfSiON, amount of VFB shift and EOT reduction is smaller than those of HfO2-based device, resulting from stronger immunity of Hf-Si bonding against oxygen vacancy generation during thermal process.
- URI
- https://www.sciencedirect.com/science/article/abs/pii/S0167931713002736http://hdl.handle.net/20.500.11754/43992
- ISSN
- 0167-9317; 1873-5568
- DOI
- 10.1016/j.mee.2013.03.056
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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