The effects of post-annealing on the performance of ZnO thin film transistors
- Title
- The effects of post-annealing on the performance of ZnO thin film transistors
- Author
- 최창환
- Keywords
- Atomic layer deposition; Zinc oxide; Thin film transistor; Annealing
- Issue Date
- 2011-05
- Publisher
- Elsevier B.V.
- Citation
- THIN SOLID FILMS, 권: 519, 호: 22, 페이지: 8109-8113
- Abstract
- In this study, we investigated the effects of a post-annealing process on the performance and stability of zinc oxide thin film transistors fabricated by atomic layer deposition. After the post-annealing process in ambient air at 250°C for 2h, the value of the saturation mobility increased from 1.2 to 1.8cm/Vs, the subthreshold swing decreased from 0.53 to 0.34V/decade, and the Ion/Ioff ratio increased from 3.1×106 to 1.7×107. The positive bias stability was also enhanced after post-annealing. These results are related to the formation of another phase in which the difference of enthalpy between the semiconductor material and contact metal electrode causes the carrier concentration at the metal/semiconductor interface to increase, leading to decreased contact resistivity. Additionally, internal modification of the semiconductor/dielectric interface and/or improving the semiconductor structure, which is related to a change in the oxidation state of Zn through the incorporation of oxygen and/or hydroxide, can result in improved device performance.
- URI
- http://www.sciencedirect.com/science/article/pii/S004060901101193X?via%3Dihub
- ISSN
- 0040-6090
- DOI
- 10.1016/j.tsf.2011.05.048
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML