The effect of the annealing temperature on the transition from conductor to semiconductor behavior in zinc tin oxide deposited atomic layer deposition
- Title
- The effect of the annealing temperature on the transition from conductor to semiconductor behavior in zinc tin oxide deposited atomic layer deposition
- Author
- 최창환
- Keywords
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ANNEALING; CARRIER MOBILITY; DEPOSITS; ELECTRICAL PROPERTIES; INSTABILITY; METALS; OXYGEN; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; TIN OXIDES; TRANSISTORS; VACANCIES; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES
- Issue Date
- 2014-09
- Publisher
- AMERICAN INSTITUTE OF PHYSICS
- Citation
- Applied Physics Letters, 2014, 105(9), P.092103-1~092103-4
- Abstract
- We investigated the electrical properties of zinc tin oxide (ZTO) films deposited via atomic layer deposition and compared them to ZnO and SnO2 films as a function of the annealing temperature. The ZTO and ZnO, except for SnO2, films exhibited an electrical transition from a metal to semiconductor characteristics when annealed above 300 C. The X-ray photoelectron spectroscopy analyses indicate that the relative area of the oxygen vacancy-related peak decreased from 58% to 41% when annealing at temperatures above 400 C. Thin film transistors incorporating ZTO active layers demonstrated a mobility of 13.2 cm2/V s and a negative bias instability of 0.2 V. VC 2014 AIP Publishing LLC.
- URI
- http://aip.scitation.org/doi/10.1063/1.4895102http://hdl.handle.net/20.500.11754/52376
- ISSN
- 0003-6951
- DOI
- 10.1063/1.4895102
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML