The effects of (NH4)(2)S-x treatment on n-GaN MOS device with nano-laminated ALD HfAlOx and Ru gate stack

Title
The effects of (NH4)(2)S-x treatment on n-GaN MOS device with nano-laminated ALD HfAlOx and Ru gate stack
Authors
최창환
Keywords
Ammonium polysulfide; Interface trap density; Passivation; GaN device
Issue Date
2015-11
Publisher
ELSEVIER SCIENCE BV
Citation
MICROELECTRONIC ENGINEERING, v. 147, Page. 210-214
Abstract
The effects of ammonium poly-sulfide, (NH4)(2)S-x, treatment on the surface of GaN metal oxide semiconductor (MOS) device with nano-laminated atomic layer deposition (ALD) HfAlOx gate dielectric and Ru gate electrode were investigated and compared with HCl pre-treatment. Compared with sample without sulfur (S) passivation, S-passivated sample shows improved surface roughness, increased capacitance, higher breakdown voltage, smaller frequency dependence, lower interface state density (D-it). It is found that (NH4)(2)S-x can remove native oxide and passivate the surface and interface states. Surface oxidation is suppressed due to higher strength in the N-S bonds than that of the N-O bonds. Further improvement is observed with increasing (NH4)(2)S-x treatment time. (C) 2015 Elsevier B.V. All rights reserved.
URI
http://www.sciencedirect.com/science/article/pii/S0167931715002932?via%3Dihubhttp://hdl.handle.net/20.500.11754/29122
ISSN
0167-9317; 1873-5568
DOI
http://dx.doi.org/10.1016/j.mee.2015.04.068
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ETC
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