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A High-Performance WSe2/h-BN Photodetector using a Triphenylphosphine (PPh3)-Based n-Doping Technique

Title
A High-Performance WSe2/h-BN Photodetector using a Triphenylphosphine (PPh3)-Based n-Doping Technique
Author
최창환
Keywords
FIELD-EFFECT TRANSISTORS; SINGLE-LAYER MOS2; DER-WAALS HETEROSTRUCTURES; MONOLAYER MOS2; INTEGRATED-CIRCUITS; WSE2; GRAPHENE; CONTACTS; PHOTORESPONSE; DEVICES
Issue Date
2016-06
Publisher
WILEY-V C H VERLAG GMBH
Citation
ADVANCED MATERIALS, v. 28, NO. 24, Page. 4824-4831
Abstract
The effects of triphenylphosphine (PPh3)-based n-doping and hexagonal boron nitride (h-BN) insertion on a tungsten diselenide (WSe2) photodetector are systematically studied, and a very high performance WSe2/h-BN heterostucture-based photodetector is demonstrated with a record photoresponsivity (1.27 x 10(6) A W-1) and temporal photoresponse (rise time: 2.8 ms, decay time: 20.8 ms) under 520 nm wavelength and 5 pW power laser illumination.
URI
https://onlinelibrary.wiley.com/doi/abs/10.1002/adma.201600032https://repository.hanyang.ac.kr/handle/20.500.11754/72035
ISSN
0935-9648; 1521-4095
DOI
10.1002/adma.201600032
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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