Improved high temperature integration of Al2O3 on MoS2 by using a metal oxide buffer layer

Title
Improved high temperature integration of Al2O3 on MoS2 by using a metal oxide buffer layer
Author
최창환
Keywords
DEPOSITION; DICHALCOGENIDE NANOSHEETS; HIGH-K DIELECTRICS; 2-DIMENSIONAL CRYSTALS; HIGH-PERFORMANCE; MULTILAYER MOS2; SURFACE-ENERGY; MONOLAYER MOS2; TRANSISTORS; GRAPHENE
Issue Date
2015-01
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v. 106, NO 2, Page. 21601-21604
Abstract
We deposited a metal oxide buffer layer before atomic layer deposition (ALD) of Al2O3 onto exfoliated molybdenum disulfide (MoS2) in order to accomplish enhanced integration. We demonstrate that even at a high temperature, functionalization of MoS2 by means of a metal oxide buffer layer can effectively provide nucleation sites for ALD precursors, enabling much better surface coverage of Al2O3. It is shown that using a metal oxide buffer layer not only allows high temperature ALD process, resulting in highly improved quality of Al2O3/MoS2 interface, but also leaves MoS2 intact. (C) 2015 AIP Publishing LLC.
URI
http://hdl.handle.net/20.500.11754/21462http://aip.scitation.org/doi/10.1063/1.4905634
ISSN
0003-6951
DOI
10.1063/1.4905634
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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