Repository at Hanyang UniversityCOLLEGE OF ENGINEERING[S](공과대학)MATERIALS SCIENCE AND ENGINEERING(신소재공학부)Articles
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High-Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment
- Title
- High-Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment
- Author
- 최창환
- Keywords
- FIELD-EFFECT TRANSISTORS; TRANSITION-METAL DICHALCOGENIDES; MOS2 TRANSISTORS; MONOLAYER MOS2; HIGH-MOBILITY; PHOSPHORUS; DEVICES; PHOTOLUMINESCENCE; PHOTOTRANSISTORS; NANOSHEETS
- Issue Date
- 2016-08
- Publisher
- WILEY-V C H VERLAG GMBH
- Citation
- ADVANCED MATERIALS, v. 28, NO. 32, Page. 6985-6985
- Abstract
- A high-performance ReS2-based thin-film transistor and photodetector with high on/off-current ratio (10(4)), high mobility (7.6 cm(2) V-1 s(-1)), high photoresponsivity (2.5 x 10(7) A W-1), and fast temporal response (rising and decaying time of 670 ms and 5.6 s, respectively) through O-2 plasma treatment is reported.
- URI
- https://onlinelibrary.wiley.com/doi/abs/10.1002/adma.201601002https://repository.hanyang.ac.kr/handle/20.500.11754/76088
- ISSN
- 0935-9648; 1521-4095
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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