| 2001-12 | Real-Time Spectroscopic Ellipsometric Studies of photo-Assisted Chemical Processes | 오혜근 |
| 2005-05 | Reduction in the Mask Error Factor by Optimizing the Diffraction Order of a Scattering Bar in Lithography | 오혜근 |
| 2005-04 | Reduction of the Absorber Shadow Effect by Changing the Absorber Side Wall Angle in Extreme Ultraviolet Lithography | 오혜근 |
| 2006-02 | Reflow modeling for elongated contact hole shape | 오혜근 |
| 2018-06 | Removal of EUV exposed hydrocarbon from Ru capping layer of EUV mask using the mixture of alkaline solutions and organic solvents | 오혜근 |
| 2002-03 | Resist Develop Prediction by Monte Carlo Simulation | 오혜근 |
| 2002-12 | Resist distribution effect of spin coating | 오혜근 |
| 2002-03 | Resist Distribution Effect of Spin Coating | 오혜근 |
| 2003-02 | Resist Pattern Collapse Modeling for Smaller Features | 오혜근 |
| 2002-11 | Resist pattern collapse with top rounding resist profile | 오혜근 |
| 2003-06 | Resist Pattern Collapse with Top Rounding Resist Profile | 오혜근 |
| 2007-04 | Resist Reflow Modeling Including Surface Tension and Bulk Effect | 오혜근 |
| 2008-02 | Resist reflow process for arbitrary 32 nm node pattern | 오혜근 |
| 2002-11 | Resolution Enhancement Method Using an Apodized Mask | 오혜근 |
| 2005-10 | Reticle Haze Measurement by Spectroscopic Ellipsometry | 오혜근 |
| 2005-12 | Rigorous coupled-wave analysis를 이용한 극자외선 리소그래피에서 그림자 효과를 줄이기 위한 마스크 변형 | 오혜근 |
| 2002-11 | Rotating Compensator Spectroscopic Ellipsometry 의 개발 및 응용 | 오혜근 |
| 2005-10 | Rubbed Polyimide Layers Studied by Rotating Sample and Compensator Spectroscopic Ellipsometry | 오혜근 |
| 2002-06 | Sensitivity of Simulation Parameter for Critical DimensionSensitivity of Simulation Parameter for Critical DimensionSensitivity of Simulation Parameter for Critical DimensionSensitivity of Simulation Parameter for Critical Dimension | 오혜근 |
| 2004-05 | Simple 157-nm interference illumination system for pattern formation | 오혜근 |
