22 0

Reduction of the Absorber Shadow Effect by Changing the Absorber Side Wall Angle in Extreme Ultraviolet Lithography

Title
Reduction of the Absorber Shadow Effect by Changing the Absorber Side Wall Angle in Extreme Ultraviolet Lithography
Author
오혜근
Keywords
EUV lithography; EUV mask; shadow effect; near-field; aerial image
Issue Date
2005-04
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 46, No. 4, Page. 1020-1024
Abstract
The near-field intensity on the extreme ultraviolet lithography (EUVL) mask and the aerial image on the wafer are affected by the mask structure. The absorber and the buffer layer make a shadow since the light is shining on the mask at some angle to the normal on-axis. This shadow effect in the EUVL mask is an important factor that decreases the contrast of the aerial image and, as a result, causes a line width variation and a pattern shift. The thickness and the structure of the absorber stack affect the mask shadowing. The optimum structure of an EUVL mask to decrease the shadow effect is researched and reported. Among the several possible mask structures, we focused on the mask edge slope variation with a typical incident angle of 5 degrees. This modification of the mask structure compensates for the shadow effect on the near-field intensity and the aerial image.
URI
http://www.jkps.or.kr/journal/view.html?uid=6908&vmd=Fullhttp://repository.hanyang.ac.kr/handle/20.500.11754/110383
ISSN
0374-4884; 1976-8524
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE