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Resist reflow process for arbitrary 32 nm node pattern

Title
Resist reflow process for arbitrary 32 nm node pattern
Author
오혜근
Keywords
32 nm node; Arbitrary pattern; Double patterning; Resist reflow process
Issue Date
2008-02
Publisher
SPIE
Citation
Proceedings of SPIE - The International Society for Optical Engineering, v. 6923, Article no. 69233A
Abstract
In order to shrink down the contact hole which is usually much larger than other patterns, the resist reflow process (RRP) has been widely used. Various types, shapes, and pitches of contact hole arrays are made by RRP, but RRP was limited to be used only for contact hole patterns. The same RRP method is expanded to 32 nm node arbitrary and complex patterns including dense line and space patterns. There might be simple 1-dimensional patterns, but 2-dimensional proximity conflict patterns are difficult to make in general. Specially, the data split with proximity correction needs a lot of attention for double patterning. 32 nm node arbitrary patterns can be easily made by using RRP without complex data split.
URI
https://www.spiedigitallibrary.org/conference-proceedings-of-spie/6923/1/Resist-reflow-process-for-arbitrary-32-nm-node-pattern/10.1117/12.772130.fullhttp://repository.hanyang.ac.kr/handle/20.500.11754/76767
ISSN
0277-786X
DOI
10.1117/12.772130
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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