2020-01 | Active efficiency as a key parameter for understanding the efficiency droop in InGaN-based light-emitting diodes | 신동수 |
2011-03 | An efficiency droop model of the saturated radiative recombination rate and its verification by radiative and nonradiative carrier lifetime measurements in InGaN-based light emitting diodes | 신동수 |
2011-04 | An Explanation of Efficiency Droop in InGaN-based Light Emitting Diodes: Saturated Radiative Recombination Rate at Randomly Distributed In-Rich Active Areas | 신동수 |
2017-05 | Analysis of carrier recombination dynamics in InGaN-based light-emitting diodes by differential carrier lifetime measurement | 신동수 |
2017-05 | Analysis of carrier recombination dynamics in InGaN-based light-emitting diodes by differential carrier lifetime measurement | 신동수 |
2021-03 | Analysis of degradation mechanisms in GaN-based light-emitting diodes under reverse-bias stress: effects of defects and junction-temperature increase | 신동수 |
2021-03 | Analysis of degradation mechanisms in GaN-based light-emitting diodes under reverse-bias stress: effects of defects and junction-temperature increases | 신동수 |
2012-03 | Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material | 신동수 |
2012-03 | Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material | 신동수 |
2015-02 | Analysis of nonradiative recombination mechanisms and their impacts on the device performance of InGaN/GaN light-emitting diodes | 신동수 |
2015-02 | Analysis of nonradiative recombination mechanisms and their impacts on the device performance of InGaN/GaN light-emitting diodes | 신동수 |
2014-11 | Analysis of recombination mechanisms in InGaN-based light-emitting diodes from electrical and optical characterizations | 신동수 |
2010-06 | Analysis of the stress distribution in the nonuniformly bent GaN thin film grown on a sapphire substrate | 신동수 |
2010-11 | Analysis of Time-resolved Photoluminescence of InGaN Quantum Wells Using the Carrier Rate Equation | 신동수 |
2021-08 | Analysis of transient degradation behaviors of organic light-emitting diodes under electrical stress | 신동수 |
2006-03 | Anisotropic plasma effects on electron capture process in an anisotropic plasma | 신동수 |
2006-08 | Application of epoxy-based photosensitive polymers for optical MEMS and subsequent reliability evaluation | 신동수 |
2017-12 | Carrier accumulation in the active region and its impact on the device performance of InGaN-based light-emitting diodes | 신동수 |
2017-12 | Carrier accumulation in the active region and its impact on the device performance of InGaN-based light-emitting diodes | 신동수 |
2015-12 | Carrier overflow in InGaN/GaN light-emitting diodes investigated by temperature-dependent short-circuit current characteristics | 신동수 |
2006-10 | Characteristics of 60-Ghz analog optical transmitter modules for radio-over-fiber applications | 신동수 |
2005-04 | Chirp parameter of electroabsorption modulators with InGaAsP intrastep quantum wells | 신동수 |
2006-11 | Chromeless phase lithography using scattering bars and zebra patterns | 신동수 |
2015-02 | Conduction Mechanisms of Leakage Currents in InGaN/GaN-Based Light-Emitting Diodes | 신동수 |
2015-02 | Conduction Mechanisms of Leakage Currents in InGaN/GaN-Based Light-Emitting Diodes | 신동수 |
2013-09 | Correlation between the efficiency droop and the blueshift of the electroluminescence in InGaN/GaN multiple-quantum-well blue light-emitting diodes | 신동수 |
2013-09 | Correlation between the efficiency droop and the blueshift of the electroluminescence in InGaN/GaN multiple-quantum-well blue light-emitting diodes | 신동수 |
2005-09 | Critical aspect of curing epoxy adhesive: fiber pistoning of LC connector | 신동수 |
2019-01 | Current–voltage characteristics of InGaN/GaN blue light-emitting diodes investigated by photovoltaic parameters | 신동수 |
2013-05 | Current, voltage and temperature distribution modeling of light-emitting diodes based on electrical and thermal circuit analysis | 신동수 |