Repository at Hanyang UniversityCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학)PHOTONICS AND NANOELECTRONICS(나노광전자학과)Articles
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Analysis of recombination mechanisms in InGaN-based light-emitting diodes from electrical and optical characterizations
- Title
- Analysis of recombination mechanisms in InGaN-based light-emitting diodes from electrical and optical characterizations
- Author
- 신동수
- Issue Date
- 2014-11
- Publisher
- ACP
- Citation
- Asia Communications and Photonics Conference, ACP, v. 2014-November, article no. 8687872, Page. 1-3
- Abstract
- Various techniques that can give useful information on the nonradiative recombination mechanisms in InGaN-based light-emitting diodes are discussed. Characterization techniques range from the simple current-voltage and light-current measurements to more sophisticated temperature-dependent methods. © OSA 2014
- URI
- https://opg.optica.org/view_article.cfm?pdfKey=c40970fb-f0ab-4888-9ddaaabc340a8528_305722https://repository.hanyang.ac.kr/handle/20.500.11754/181882
- ISSN
- 2162-108X
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
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