Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material

Title
Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material
Author
신동수
Keywords
LEDS
Issue Date
2012-03
Publisher
AMERICAN INSTITUTE OF PHYSICS
Citation
Applied Physics Letters, Vol.100 No.13 [2012], 131109
Abstract
In InGaN quantum wells (QWs), effective active volume can be greatly reduced due to carrier localization in In-rich region and inhomogeneous carrier distribution. The authors investigate the efficiency droop of InGaN-based light-emitting diodes (LEDs) based on the carrier rate equation including the influence of the reduced effective active volume. It is found that efficiency droop characteristics can be modeled well without employing a large Auger recombination coefficient by assuming that only a small portion of the QWs is effectively used as active region. The presented model is expected to provide insight into the realization of droop-free operation in nitride LEDs. (C) 2012 American Institute of Physics. [http://dx.doi.org.access.hanyang.ac.kr/10.1063/1.3698113]
URI
https://aip.scitation.org/doi/10.1063/1.3698113
ISSN
0003-6951
DOI
10.1063/1.3698113
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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