Conduction Mechanisms of Leakage Currents in InGaN/GaN-Based Light-Emitting Diodes
- Title
- Conduction Mechanisms of Leakage Currents in InGaN/GaN-Based Light-Emitting Diodes
- Author
- 신동수
- Keywords
- Dot emission; light-emitting diodes (LEDs); threading dislocations (TDs); variable-range hopping (VRH)
- Issue Date
- 2015-02
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v. 62, Page. 587-592
- Abstract
- Local dot-like emissions in InGaN/GaN-based light-emitting diodes under both forward and reverse biases are investigated by carefully examining their locations and electroluminescence spectra. The effects of dot-like emissions on electrical and optical performances are also discussed. From the properties of the leakage-component dependence on electric field and temperature, the dominant reverse leakage mechanism is investigated as a function of bias from 100 to 400 K. It is concluded that the underlying mechanism of local dot-like emissions are related to threading dislocations under both reverse and forward biases.
- URI
- http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6998817&tag=1http://hdl.handle.net/20.500.11754/22444
- ISSN
- 0018-9383; 1557-9646
- DOI
- 10.1109/TED.2014.2381218
- Appears in Collections:
- GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML