Conduction Mechanisms of Leakage Currents in InGaN/GaN-Based Light-Emitting Diodes

Title
Conduction Mechanisms of Leakage Currents in InGaN/GaN-Based Light-Emitting Diodes
Author
신동수
Keywords
Dot emission; light-emitting diodes (LEDs); threading dislocations (TDs); variable-range hopping (VRH)
Issue Date
2015-02
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE TRANSACTIONS ON ELECTRON DEVICES, v. 62, Page. 587-592
Abstract
Local dot-like emissions in InGaN/GaN-based light-emitting diodes under both forward and reverse biases are investigated by carefully examining their locations and electroluminescence spectra. The effects of dot-like emissions on electrical and optical performances are also discussed. From the properties of the leakage-component dependence on electric field and temperature, the dominant reverse leakage mechanism is investigated as a function of bias from 100 to 400 K. It is concluded that the underlying mechanism of local dot-like emissions are related to threading dislocations under both reverse and forward biases.
URI
http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6998817&tag=1http://hdl.handle.net/20.500.11754/22444
ISSN
0018-9383; 1557-9646
DOI
10.1109/TED.2014.2381218
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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