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Analysis of carrier recombination dynamics in InGaN-based light-emitting diodes by differential carrier lifetime measurement

Title
Analysis of carrier recombination dynamics in InGaN-based light-emitting diodes by differential carrier lifetime measurement
Author
신동수
Issue Date
2017-05
Publisher
IOP PUBLISHING LTD
Citation
APPLIED PHYSICS EXPRESS, v. 10, no. 5, Article no. 052101
Abstract
In this work, we investigate the carrier recombination dynamics in InGaN-based blue LED devices by analyzing the radiative and nonradiative carrier lifetimes as functions of driving current. To separate the radiative and nonradiative carrier lifetimes, we utilize the information on the internal quantum efficiency (IQE) and differential carrier lifetime. For comparative analysis, the characteristics of the IQE and electroluminescence spectrum are also used. Through measurements and analyses, we demonstrate that the saturation of the radiative recombination rate induced by the phase-space filling in the active volume triggers the increase in nonradiative recombination rate, thus leading to the efficiency droop. (C) 2017 The Japan Society of Applied Physics
URI
https://iopscience.iop.org/article/10.7567/APEX.10.052101http://repository.hanyang.ac.kr/handle/20.500.11754/114152
ISSN
1882-0778; 1882-0786
DOI
10.7567/APEX.10.052101
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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