Conduction Mechanisms of Leakage Currents in InGaN/GaN-Based Light-Emitting Diodes
- Title
- Conduction Mechanisms of Leakage Currents in InGaN/GaN-Based Light-Emitting Diodes
- Author
- 신동수
- Keywords
- Dot emission; light-emitting diodes (LEDs); threading dislocations (TDs); variable-range hopping (VRH)
- Issue Date
- 2015-02
- Publisher
- Institute of Electrical and Electronics Engineers
- Citation
- IEEE Transactions on Electron Devices, v. 62, NO. 2, Page. 587-592
- Abstract
- Local dot-like emissions in InGaN/GaN-based light-emitting diodes under both forward and reverse biases are investigated by carefully examining their locations and electroluminescence spectra. The effects of dot-like emissions on electrical and optical performances are also discussed. From the properties of the leakage-component dependence on electric field and temperature, the dominant reverse leakage mechanism is investigated as a function of bias from 100 to 400 K. It is concluded that the underlying mechanism of local dot-like emissions are related to threading dislocations under both reverse and forward biases.
- URI
- https://ieeexplore.ieee.org/document/6998817https://repository.hanyang.ac.kr/handle/20.500.11754/181880
- ISSN
- 0018-9383;1557-9646
- DOI
- 10.1109/TED.2014.2381218
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
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