Browsing "COLLEGE OF ENGINEERING SCIENCES[E](공학대학)" byAuthor백상현

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Showing results 1 to 30 of 85

Issue DateTitleAuthor(s)
2016-09A 65 nm Temporally Hardened Flip-Flop Circuit백상현
2009-10A di/dt Compensation Technique in Delay Testing by Disconnecting Power Pins백상현
2011-04AC-DC factor sensitivity for DRAM components lifetime under hot-carrier injection백상현
2017-02Active Precharge Hammering to Monitor Displacement Damage Using High-Energy Protons in 3x-nm SDRAM백상현
2015-02Active-precharge hammering on a row induced failure in DDR3 SDRAMs under 3× nm technology백상현
2017-02An alternative approach to measure alpha-particle-induced SEU cross-section for flip-chip packaged SRAM devices: High energy alpha backside irradiation백상현
2014-08An Efficient Multiple Cell Upsets Tolerant Content-Addressable Memory백상현
2015-04An SEU-Tolerant DICE Latch Design With Feedback Transistors백상현
2009-05Analysis of low power sensor node using data compression백상현
2005-03Analytical Test Buffer Design For Differential Signaling I/O Buffers by Error Syndrome Analysis백상현
2019-06Architectural design tradeoffs in SRAM-based TCAMs백상현
2016-11An Area Efficient Stacked Latch Design Tolerant to SEU in 28 nm FDSOI Technology백상현
2016-10Assessing alpha-particle-induced SEU sensitivity of flip-chip bonded SRAM using high energy irradiation백상현
2017-07BPPT - Bulk potential protection technique for hardened sequentials백상현
2017-07BPPT–Bulk Potential Protection Technique for Hardened Sequentials백상현
2005-09Built-In Null Detector Design For AC-Coupled Differential Receive Buffer백상현
2012-12Characterizing the Capacitive Crosstalk in SRAM Cells Using Negative Bit-Line Voltage Stress백상현
2012-09Comparative study of MC-50 and ANITA neutron beams by using 55 nm SRAM백상현
2019-08Correctable and uncorrectable errors using large scale DRAM DIMMs in replacement network servers백상현
2023-01DDR4 Ball Grid Array Package Intermittent Fracture Effect on Signal Integrity백상현
2023-01-23DDR4 Ball Grid Array Package Intermittent Fracture Effect on Signal Integrity백상현
2021-04DDR4 BER Degradation Due to Crack in FBGA Package Solder Ball백상현
2021-04DDR4 Data Channel Failure Due to DC Offset Caused by Intermittent Solder Ball Fracture in FBGA Package백상현
2007-12Delay Fault Coverage Enhancement by Partial Clocking For Low Power Designs with Heavily Gated Clocks백상현
2007-12Delay fault coverage enhancement by partial clocking for low-power designs with heavily gated clocks백상현
2011-03Design method of NOR-type comparison circuit in CAM with ground bounce noise considerations백상현
2011-06Designing ad-hoc scrubbing sequences to improve memory reliability against soft errors백상현
2022-05Divulge of Root Cause Failure in Individual Cells of 2x nm Technology DDR4 DRAM at Operating Temperature백상현
2011-07DRAM failure cases under hot-carrier injection백상현
2006-11Efficient Interconnect Test Patterns for Crosstalk and Static Faults백상현

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