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COLLEGE OF ENGINEERING[S](공과대학)
MATERIALS SCIENCE AND ENGINEERING(신소재공학부)
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Results 1-10 of 11 (Search time: 0.003 seconds).
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Title
Author(s)
2018-07
Postdeposition annealing on VO2 films for resistive random-access memory selection devices
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2018-07
Leakage current suppression in spatially controlled Si-doped ZrO2 for capacitors using atomic layer deposition
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2018-01
Characteristics of low-kappa SiOC films deposited via atomic layer deposition
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2018-03
Fabrication of high crystalline SnS and SnS2 thin films, and their switching device characteristics
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2018-05
Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N-2 plasma for gate spacer
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2018-08
Effect of N Concentration Upon Resistive Switching Behavior of Au/Ni/TaON/NiSi ECM Devices
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2018-08
Effect of ozone concentration on atomic layer deposited tin oxide
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2018-09
H2S adsorption process on (0001) alpha-quartz SiO2 surfaces
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2018-04
Effect of adding an insulator between metal and semiconductor layers on contact resistance
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2018-11
Terahertz rectification in ring-shaped quantum barriers
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electrochemical metallization memory
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ELECTRODES
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field effect transistor
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FIELD ENHANCEMENT
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GAS
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HIGH-DENSITY
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High-k material
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highly crystalline thin film
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HYDROGEN-SULFIDE
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Hydrothermal growth
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