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Characteristics of low-kappa SiOC films deposited via atomic layer deposition

Title
Characteristics of low-kappa SiOC films deposited via atomic layer deposition
Author
전형탁
Keywords
Octamethylcyclotetrasiloxane; Atomic layer deposition; Low-dielectric constant; Silicon oxycarbide; Thin film
Issue Date
2018-01
Publisher
ELSEVIER SCIENCE SA
Citation
THIN SOLID FILMS, v. 645, page. 334-339
Abstract
The deposition of SiOC thin films via remote plasma atomic layer deposition was investigated. Octamethylcyclotetrasiloxane (OMCTS) and O-2, Ar, H-2 plasmas were respectively used as a precursor and reactants during the deposition process at 400 degrees C. Plasma and deposition temperatures had a significant effect on the physical and electrical characteristics of the films. When Ar and H-2 plasma was respectively used during the deposition process, films exhibited low dielectric constants while incorporating carbon; however, O-2 plasma yielded carbon free SiO2 films. Low dielectric constants resulted in low film densities and the presence of carbon within the films. When Ar and H-2 plasma was used as the reactant gas, pores within the films with loose structures and SieC bonds served to lower the dielectric constant. As a result, Ar and H-2 plasma conditions exhibited low dielectric constants of 2.7 and 3.1 at 100 degrees C, respectively. Meanwhile, the presence of carbon and low film densities caused leakage paths within the films. X-ray photoelectron spectroscopy supported analyses demonstrating the bonding characteristics of Si, C, O components.
URI
https://www.sciencedirect.com/science/article/pii/S0040609017308076?via%3Dihubhttp://repository.hanyang.ac.kr/handle/20.500.11754/117186
ISSN
0040-6090
DOI
10.1016/j.tsf.2017.10.045
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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