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Effect of adding an insulator between metal and semiconductor layers on contact resistance

Title
Effect of adding an insulator between metal and semiconductor layers on contact resistance
Author
전형탁
Issue Date
2018-04
Publisher
A V S AMER INST PHYSICS
Citation
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v. 36, no. 3, Article no. 032202
Abstract
The authors investigated the effective Schottky barrier heights of metal and silicon contacts after insertion of insulator layers with different conduction band offsets. A decrease in Schottky barrier height after insertion of an insulator layer was observed. In particular, the Schottky barrier height of metal/semiconductor contacts was lowest when a ZnO layer was inserted compared to the other insulator layer types, because the conduction band offset between ZnO and silicon was the lowest among those measured. The authors also investigated current density as a function of the thickness of the insulator and doping concentration of silicon. Published by the AVS.
URI
https://avs.scitation.org/doi/10.1116/1.5020310http://repository.hanyang.ac.kr/handle/20.500.11754/118203
ISSN
1071-1023
DOI
10.1116/1.5020310
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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