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Effect of N Concentration Upon Resistive Switching Behavior of Au/Ni/TaON/NiSi ECM Devices

Title
Effect of N Concentration Upon Resistive Switching Behavior of Au/Ni/TaON/NiSi ECM Devices
Author
전형탁
Keywords
conductive filaments; electrochemical metallization memory; Ni; TaOn
Issue Date
2018-08
Publisher
WILEY-V C H VERLAG GMBH
Citation
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v. 215, no. 23, Article no. 1800181
Abstract
In this study, Au/Ni/TaOx/NiSi and Au/Ni/TaON/NiSi electrochemical metallization memory devices are fabricated and their resistive switching (RS) behavior is investigated. The composition of TaON is controlled by changing the N partial pressure during sputtering. The Au/Ni/TaOx/NiSi device does not function as a memory device, whereas the Au/Ni/TaON/NiSi devices show conventional ECM characteristics. In addition, the device with the highest N concentration among those fabricate exhibites the best RS characteristics, with a constant high-resistance-state (HRS) current level and stable retention properties over 5 x 10(4) s, due to the formation of strong Ni conductive filaments (CFs). The TaON film with the highest N concentration has the lowest defect density, allowing stable Ni CFs to form and thereby yielding superior device performance.
URI
https://onlinelibrary.wiley.com/doi/abs/10.1002/pssa.201800181http://repository.hanyang.ac.kr/handle/20.500.11754/119657
ISSN
1862-6300; 1862-6319
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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